| 摘要 |
A semiconductor device 1 includes a silicon substrate 5 , a semiconductor chip 2 placed on a surface S 1 of the silicon substrate 5 , a protruding electrode 6 (first protruding electrode) provided on a surface S 2 of the semiconductor chip 2 opposite to the silicon substrate 5 , and another protruding electrode 7 (second protruding electrode) provided on the surface S 1 of the silicon substrate 5 . Top portions of the protruding electrodes 6, 7 are of a generally same height from the surface S 1 of the silicon substrate 5 . In other words, the top portions of the protruding electrodes 6, 7 are flush on a plane parallel to the surface S 1 of the silicon substrate 5.
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