发明名称 GROWN PHOTONIC CRYSTALS IN SEMICONDUCTOR LIGHT EMITTING DEVICES
摘要 <p>A photonic crystal is grown within a semiconductor structure, such as a III- nitride structure, which includes a light emitting region disposed between an n-type region and a p-type region. The photonic crystal may be multiple regions of semiconductor material separated by a material having a different refractive index than the semiconductor material. For example, the photonic crystal may be posts of semiconductor material grown in the structure and separated by air gaps or regions of masking material. Growing the photonic crystal, rather than etching a photonic crystal into an already-grown semiconductor layer, avoids damage caused by etching which may reduce efficiency, and provides uninterrupted, planar surfaces on which to form electric contacts.</p>
申请公布号 WO2006134568(A1) 申请公布日期 2006.12.21
申请号 WO2006IB51912 申请日期 2006.06.14
申请人 KONINKLIJKE PHILIPS ELECTRONICS N.V.;LUMILEDS LIGHTING, U.S., LLC 发明人 WIERER, JONATHAN, J., JR.;KRAMES, MICHAEL, R.;GARDNER, NATHAN, F.
分类号 C30B29/60;G02B6/122;G02B6/13;H01L33/08;H01L33/24 主分类号 C30B29/60
代理机构 代理人
主权项
地址