| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for fabricating a semiconductor device in which dopant atoms can be introduced easily and quickly into a semiconductor film, and to provide a method for forming a semiconductor film, and a semiconductor device. SOLUTION: The apparatus 1000 for fabricating a semiconductor device comprises a stage 1140 for arranging a first substrate 220, a means 1150 for irradiating light, and a means 1200 for ejecting dopant gas G1. The first substrate 220 has a semiconductor layer 314, the light has a wavelength being absorbed by the semiconductor layer 314, the dopant gas G1 has dopant atoms being diffused in the semiconductor layer 314. COPYRIGHT: (C)2007,JPO&INPIT
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