发明名称 A PLASMA ENHANCED ATOMIC LAYER DEPOSITION SYSTEM
摘要 <p>A plasma enhanced atomic layer deposition (PEALD) system includes a first chamber component coupled to a second chamber component to provide a processing chamber defining an isolated processing space within the processing chamber. A substrate holder is provided within the processing chamber and configured to support a substrate, a first process material supply system is configured to supply a first process material to the processing chamber and a second process material supply system is configured to supply a second process material to the processing chamber. A power source is configured to couple electromagnetic power to the processing chamber, and a sealing assembly interposed between the first and second chamber components. The sealing assembly includes a plurality of sealing members configured to reduce the amount of external contaminants permeating through an interface of the first and second components into the isolated processing space of the processing chamber, wherein the film is formed on the substrate by altematingly introducing the first process material and the second process material.</p>
申请公布号 WO2006104863(A2) 申请公布日期 2006.10.05
申请号 WO2006US10682 申请日期 2006.03.22
申请人 TOKYO ELECTRON LIMITED;ISHIZAKA, TADAHIRO;MATSUDA, TSUKASA;CERIO, JR., FRANKM.;YAMAMOTO, KAORU 发明人 ISHIZAKA, TADAHIRO;MATSUDA, TSUKASA;CERIO, JR., FRANKM.;YAMAMOTO, KAORU
分类号 C23C16/00 主分类号 C23C16/00
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