发明名称 Reduced porosity high-k thin film mixed grains for thin film capacitor applications
摘要 A method including forming a layer of a first ceramic material on a substrate; and after forming the layer, forming a second ceramic material on the layer of the first ceramic material, the formed second ceramic material including an average grain size less than a grain size of the first ceramic material. An apparatus including a first electrode; a second electrode; and a sintered ceramic material, wherein the ceramic material comprises first ceramic grains defining grain boundaries therebetween and second ceramic grains having an average grain size smaller than a grain size of the first ceramic grains. A system including a device including a microprocessor, the microprocessor coupled to a circuit board through a substrate, the substrate including a capacitor structure formed on a surface, the capacitor structure including a first electrode, a second electrode, and a sintered ceramic material disposed between the first electrode and the second electrode.
申请公布号 US2006220177(A1) 申请公布日期 2006.10.05
申请号 US20050096685 申请日期 2005.03.31
申请人 PALANDUZ CENGIZ A 发明人 PALANDUZ CENGIZ A.
分类号 H01L29/00;H01L21/469;H05K1/16 主分类号 H01L29/00
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