| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition to be used for the process of manufacturing a semiconductor such as an IC, for manufacturing a circuit board of a liquid crystal element, a thermal head or the like, and for other photofabrication processes, and to provide a pattern forming method using the positive resist composition, in particular, to provide a positive resist composition excellent regarding to pattern collapse and line edge roughness, and to provide a pattern forming method using the composition. <P>SOLUTION: The positive resist composition contains: (A) a cyclodextrin compound having a specified structure; (B) a compound which generates an acid by irradiation with active rays or radiation; and (C) a resin which has a monocyclic or polycyclic alicyclic hydrocarbon structure and/or a silicon atom and which is decomposed by the effect of an acid to increase the solubility in an alkali developing solution. The pattern forming method is carried out by using the above positive resist composition. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
