发明名称 |
SEMICONDUCTOR LIGHT EMITTING DEVICE MEMBER, METHOD FOR MANUFACTURING SUCH SEMICONDUCTOR LIGHT EMITTING DEVICE MEMBER AND SEMICONDUCTOR LIGHT EMITTING DEVICE USING SUCH SEMICONDUCTOR LIGHT EMITTING DEVICE MEMBER |
摘要 |
<p>A semiconductor light emitting device member which has excellent transparency, light resistance and heat resistance, and seals a semiconductor light emitting device without generating cracks and peeling even when used for a long period of time. The semiconductor light emitting device member wherein, (1) a solid-state Si magnetic resonance spectrum is provided with at least one peak selected from (i) a peak wherein a peak top position is in a region having a chemical shift of -40ppm or more but not more than 0ppm and a peak half value width is 0.3ppm or more but not more than 3.0ppm, and (ii) a peak selected from a group composed of peaks wherein peak top positions are in a region having a chemical shift of -80ppm or more but less than -40ppm and a peak half value width is 0.3ppm or more but not more than 5.0ppm, (2) a silicon content rate is 20 wt.% or more, and (3) a silanol content is 0.1 wt.% or more but not more than 10 wt.%, is used.</p> |
申请公布号 |
WO2006090804(A1) |
申请公布日期 |
2006.08.31 |
申请号 |
WO2006JP303328 |
申请日期 |
2006.02.23 |
申请人 |
MITSUBISHI CHEMICAL CORPORATION;KATO, HANAKO;MORI, YUTAKA;KOBAYASHI, HIROSHI;TOMURA, TSUBASA |
发明人 |
KATO, HANAKO;MORI, YUTAKA;KOBAYASHI, HIROSHI;TOMURA, TSUBASA |
分类号 |
C08G77/08;C08L83/04;H01L33/56 |
主分类号 |
C08G77/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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