| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of spreading which can form a second conductivity type semiconductor layer uniformly in a large quantity of crystal silicon particles and to further provide a photoelectric converter with a low cost and high performance. <P>SOLUTION: The method of spreading an impurity in the crystal silicon particles includes the steps of introducing second conductivity type including oxygen in a spread pipe comprising in dopant gas many first conductivity type crystal silicon particle held in a spread pipe, heating the spread pipe to the temperature which silica gas is formed in these front surfaces and the dopant for the second conductivity type does not diffuse inside and rotating the spread pipe and agitating the crystal silicon particle and forming silica glass including the dopant on the front surface of the crystal silicon particle; and next forming a second conductivity type silicon layer by heating the crystal silicon particle which contains the silica glass including the dopant to the spread temperature of the dopant without rotating the spread pipe and diffusing the dopant in the front surface of the crystal silicon particle. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
