| 摘要 |
Provided are an integrated inductor and a method of manufacturing the same. The integrated inductor includes: a silicon on insulator (SOI) wafer on which a substrate, an oxide layer, and an active layer are stacked; a first metal interconnection formed in a predetermined region on the SOI wafer; a second metal interconnection electrically connected to the first metal interconnection; and a first interlayer insulating layer formed between the first and second metal interconnections so as to make the first and second metal interconnections spaced from each other by a constant interval, so that the quality factor Q can be enhanced, a frequency where the maximum quality factor Q occurs can be adjusted to a desired band, a leakage current to the substrate can be prevented from occurring, and heat within the inductor can be suppressed from occurring.
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