| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a writing method for a nonvolatile semiconductor device the method of which reduces an electric potential difference between the source and the drain; to shorten the gate length of a memory cell. <P>SOLUTION: According to the method, hot electrons (BBHE) are induced by a band-to-band tunneling effect near the drain, and the hot electrons are injected into a charge accumulating layer, to conduct writing of bit data. The gate voltage Vg, cell well voltage Vsub, source voltage Vs, and drain voltage Vd are set to have a relation Vg>Vsub>Vs>Vd, where (Vg-Vd) is equal to or higher than the voltage difference for generating a band-to-band tunneling current, and (Vsub-Vd) is almost equal to or higher than the barrier potential of the tunnel insulating film. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
