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发明名称
GATE ISOLATION LAYER OF SEMICONDUCTOR TRANSISTORS AND A METHOD FOR FABRICATING THE SAME
摘要
申请公布号
KR20060064971(A)
申请公布日期
2006.06.14
申请号
KR20040103668
申请日期
2004.12.09
申请人
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
发明人
LIM, JUNG WOOK;YUN, SUN JIN;LEE, JIN HO
分类号
H01L21/31
主分类号
H01L21/31
代理机构
代理人
主权项
地址
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