| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To suppress dimensional changes in a pattern depending on a covering rate of the pattern, and to obtain a uniform pattern dimension. <P>SOLUTION: The exposure mask has first and second mask patterns comprising a coated region 32 by a light-shielding film and an opening region 33, disposed in the proximity to each other, and is used to expose a resist applied on a wafer to form in the resist a first resist pattern and a second resist pattern corresponding to the first mask pattern (cell region) and to the second mask pattern (dummy region), respectively. The quantity of transmitting light through the opening region 33 of the second mask pattern is controlled in such a manner that the average exposure light quantity, the average latent image strength or the average dissolving rate of the second resist pattern is almost equal to those of the first resist pattern. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
