Magnetoresistive effect element, magnetic memory and magnetic head

摘要

A magnetoresistive effect element of a tunnel junction type includes a magnetic multi-layered film ( 1 ), ferromagnetic film ( 3 ) and intervening insulating film ( 2 ) such that a current flows between the magnetic multi-layered film and the ferromagnetic film, tunneling through the insulating film. The magnetic multi-layered film includes a first ferromagnetic layer, second ferromagnetic layer and anti-ferromagnetic layer inserted between the first and second ferromagnetic layers.