| 摘要 |
<p>PURPOSE:To obtain an element having a sufficiently large nonlinear current-voltage characteristic by providing plural lead wirings, display electrodes and semiconductor layers on a substrate constituting a display device and forming the semiconductor layers of boron alone or a compd. consisting of boron and nitrogen. CONSTITUTION:This device has at least the plural lead wirings 2, the display electrodes 5 provided by plural pieces each with each of the lead wirings 2, and the semiconductor layers 3 which are interposed and electrically connected between the lead wirings 2 and the respective display electrodes on the substrate 1. The semiconductor layers are formed of the boron alone or the compd. consisting of the boron and nitrogen. Namely, the nonlinear current-voltage characteristic is realized and the contrast characteristic is improved by the nonlinear element consisting of the conductor-semiconductor- conductor structure. The semiconductor layers 3 are formed of the boron alone or the specific dielectric constant of the compd. consisting of the boron and nitrogen is relatively small so that the nonlinear element can be formed to a relatively large size. The display device which has the simple structure, can be produced at a high yield and has the excellent linearity concerning the current-voltage characteristic is thereby obtd.</p> |
