Low voltage MOS device and corresponding manufacturing process,申请号EP20000401471-传众专利搜索

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发明名称	Low voltage MOS device and corresponding manufacturing process
摘要
申请公布号	EP1058317(B1)	申请公布日期	2009.09.02
申请号	EP20000401471	申请日期	2000.05.25
申请人	INTERSIL CORPORATION	发明人	ZENG, JUN;WHEATLEY, CARL, JR.
分类号	H01L29/772;H01L29/78;H01L21/336;H01L29/08;H01L29/36	主分类号	H01L29/772
代理机构		代理人
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