| 摘要 |
A method for manufacturing an electrophoresis display device, the electrophoresis display device and an electronic device are provided to improve the reliability of a display unit. A selection transistor, an N-type transistor of an feedback inverter and semiconductor units(24a,33a,34a) of a P-type transistor are arranged in a predetermined area A within a pixel(20). The laser beams having the same pulse are irradiated to the semiconductor units, at the same time so that crystallization of the same degree can be performed on the semiconductor units. Electric characteristics of the semiconductor units are almost uniform. Therefore, the change in the electric characteristics of the selection transistor, N-type transistor and P-type transistor is prevented. |
