| 摘要 |
A plasma etching method, plasma etching apparatus and computer-readable storage medium are provided to suppress the use of the process gas of high corrosive by plasma etching of the silicon layer. The photoresist layer(102) patterned to the pattern of the space and predetermined line is formed on the surface of the silicon substrate(101). The anti-reflective coating layer(103), the polysilicon layer(104), and the TEOS layer(105) are formed at the lower layer of the silicon substrate. The electrostatic chuck is interposed between electrodes and. The electrodes are connected to the DC power supply. The coolant flow is formed inside the support stand. The refrigerant entrance piping, and the coolant outlet piping are connected in the coolant flow. The electrostatic chuck for the semiconductor wafer is prepared at the upper side of the main chuck.
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