THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE

摘要

Provided is a thin film transistor substrate wherein deterioration of dry etching rates of a source electrode and a drain electrode and etching residuals are not generated and a barrier metal between a semiconductor layer and a wiring metal, such as the source electrode and the drain electrode, can be eliminated. A display device is also provided. The thin film transistor substrate is provided with a semiconductor layer (1), a source electrode (2), a drain electrode (3) and a transparent conductive film (4). The source electrode (2) and the drain electrode (3) are composed of an Al alloy thin film, which is formed by patterning wherein dry etching is employed and contains a Si and/or Ge of 0.1-1.5 atm%, a Ni and/or Co of 0.1-3.0 atm% and a La and/or Nd of 0.1-0.5 atm%, and the thin film transistor is directly connected to the semiconductor layer (1).