| 摘要 |
PROBLEM TO BE SOLVED: To provide: an image sensor and a manufacturing method thereof, which can increase physical contact force between a photodiode and an interconnection while increasing a fill factor and can obtain ohmic contact; an image sensor and a manufacturing device thereof, which cause no charge sharing phenomenon while increasing a fill factor; and an image sensor and a manufacturing method thereof, which can prevent saturation and deterioration of sensitivity by providing a smooth movement path for photo charges between a photodiode and a readout circuitry to minimize a dark current source. SOLUTION: The image sensor includes the interconnection and the readout circuitry formed on a first substrate, a metal layer formed on the interconnection, and an image sensing part electrically connected to the metal layer. COPYRIGHT: (C)2009,JPO&INPIT
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