| 摘要 |
A method of producing a semiconductor pressure sensor, the sensor having a diaphragm to be deformed by pressure, including: a step of preparing a semiconductor substrate having front and rear surfaces, both of the surfaces being mirror surfaces; a thermally oxidizing step of forming a thermally-oxidized film on the rear surface of the semiconductor substrate; a detecting part forming step of forming a detecting part on the front surface of the semiconductor substrate, the detecting part including a gauge resistance layer; a patterning step of forming an etching mask on the rear surface of the semiconductor substrate, the etching mask including the thermally-oxidized film; and an etching step of etching the semiconductor substrate from its rear surface with the etching mask to form a concave portion, the concave portion having a bottom portion functioning as a diaphragm.
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