发明名称 |
Integrated assist features for epitaxial growth bulk tiles with compensation |
摘要 |
A method for making a semiconductor device is provided which comprises (a) creating a first data set (301) which defines a first set of tiles (303) for a trench chemical mechanical polishing (CMP) process; (b) deriving a first trench CMP mask set (307) and a first epitaxial growth mask set (309) from the first data set, wherein the first epitaxial growth mask set is derived from the first data set by removing a subset (305) of the tiles defined by the first data set and incorporating the subset of tiles into the first epitaxial growth mask set; and (c) reconfiguring the first trench CMP mask set to account for the first epitaxial growth mask set, thereby defining a second trench CMP mask set (308).
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申请公布号 |
US7565639(B2) |
申请公布日期 |
2009.07.21 |
申请号 |
US20070650254 |
申请日期 |
2007.01.04 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
ZIA OMAR;CAVE NIGEL;KOLAGUNTA VENKAT;TIAN RUIQI;TRAVIS EDWARD O. |
分类号 |
G06F17/50 |
主分类号 |
G06F17/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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