| 摘要 |
A method for manufacturing a light-absorbing layer of a polycrystalline silicon solar cell, a high efficient polycrystalline silicon solar cell using the same, and a manufacturing method thereof are provided to form a solar cell having excellent characteristics by crystallizing an amorphous silicon thin film without causing metallic pollution. A polycrystalline silicon solar cell includes a rear electrode(20), an n-type polycrystalline silicon layer(30b), a light-absorbing layer(50a), a p-type polycrystalline silicon layer(60), a transparent electrode layer(70), a front electrode(80), and an anti-reflective coating layer(90). The rear electrode is formed on the transparent insulating substrate(10). The n-type polycrystalline silicon layer is formed on the rear electrode. In the n-type polycrystalline silicon layer, the amorphous silicon is crystallized by MIC(Metal Induced Crystallization). The electrons are accumulated in the n-type polycrystalline silicon layer. The light-absorbing layer is formed on the n-type polycrystalline silicon layer. The light-absorbing layer is formed with intrinsic polycrystalline silicon. The intrinsic polycrystalline silicon is used for generating electron-hole pairs by using a MIVC(Metal Induced Vertical Crystallization). The intrinsic polycrystalline silicon has a vertical column structure. The p-type polycrystalline silicon layer is formed on the light-absorbing layer. The p-type polycrystalline silicon layer has a grain structure of a vertical column type. The holes are accumulated in the p-type polycrystalline layer. The transparent electrode layer is formed on the p-type polycrystalline silicon layer. The front electrode is formed on the transparent electrode layer. The anti-reflective coating layer is formed to surround the front electrode and the transparent electrode layer.
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