COMPOUND SEMICONDUCTOR IMAGE SENSOR

摘要

A chemical compound semiconductor image sensor is provided to enhance sensitivity thereof by using a I-III-VI-based material having a high optical absorbing ratio in comparison with an existing Si-based material. An image sensor includes a substrate(10) having a first, second, and third I-III-VI-based photoelectric conversion parts(11,12,13) of a multi-layered structure. The I-III-VI-based photoelectric conversion parts of a multi-layered structure are formed to absorb the light gradually according to wavelength bands. The first photoelectric conversion part includes a I-III-VI-based material layer for absorbing the light of the first wavelength band. The second photoelectric conversion part includes a I-III-VI-based material layer for absorbing the light of the second wavelength band longer than the first wavelength band. The third photoelectric conversion part includes a I-III-VI-based material layer for absorbing the light of the third wavelength band longer than the second wavelength band.