THERMOELECTRIC DEVICE PRODUCED BY QUANTUM CONFINEMENT IN NANOSTRUCTURES, AND METHODS THEREFOR

摘要

The present invention provides a method for preparing a thermoelectric device (100) comprising depositing a thermoelectric film (104) on a substrate (102), locating one or more electrodes within the thermoelectric film (104), partially oxidizing the thermoelectric film (104) to form an oxide layer (106) and melting the oxide layer (106) to form an electrical insulating and protective barrier on a top surface of the thermoelectric film (104).