| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing itself from changing in electrical characteristics because of deformation of a support substrate due to conduction of heat generated during operation of a semiconductor element to the support substrate. <P>SOLUTION: The semiconductor device 1 has a substrate 2, a semiconductor element region 3, an electrode portion 4, and a drain electrode 5. On a second principal surface 2b of the substrate 2, recessed portions 2c are formed. The drain electrode 5 is formed covering the second principal surface 2b of the substrate 2. A portion of the drain electrode 5 is partially embedded in the recessed portions 2c. In a region of the drain electrode 5 which corresponds to the recessed portion 2c, at least one void 6 is formed in each recessed portion 2c. <P>COPYRIGHT: (C)2009,JPO&INPIT |
