| 摘要 |
A manufacturing method of a semiconductor device is provided to secure a process margin and to improve an integration rate by minimizing a spacer width. A gate oxide film(203), a poly silicon(205), and a photoresist pattern are formed on a top part of a semiconductor substrate(201). A poly gate is formed by selectively etching the gate oxide film and the poly silicon. A side wall oxidation film insulates a gate, and is formed on a front of the semiconductor substrate including the poly gate. A spacer nitride film is formed by using a chemical vapor deposition method. A spacer(213) is formed on a side wall of the gate. The semiconductor substrate is removed by a preset depth by performing an etching process with the spacer as a mask. An oxide film including dopant for a thin junction(217) is formed by the chemical vapor deposition method. The dopant included in the oxide film is diffused inside the semiconductor substrate by a thermal process. A source and a drain(219) are formed on a top part of the semiconductor substrate including the thin junction. |
