SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device and method of manufacturing the same is provided to obtain the open bit line structure by arranging a contact plug of one line between word lines and the contact plug of two lines between bit lines. The third interlayer insulating film(144) is formed on the top of the bit line(134) and the second inter metal dielectric(132). The top of the third interlayer insulating film is removed by the chemical mechanical polishing in order to expose bit lines. The fourth interlayer insulating film(146) is formed on the top of the planarized third interlayer insulating film and bit lines. The fifth photoresist pattern is formed on the top of the fourth interlayer insulating film. The fourth conductive film is formed in order to bury second contact holes. The barrier film(150) is formed on the top of contact plugs.