| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a high-quality magnetoresistance effect element which is capable of reducing resistance in the perpendicular-plane direction, and preventing deterioration in the performance of a barrier layer, and a magnetoresistive device using the element. <P>SOLUTION: The magnetoresistance effect element comprises: a free layer; a pinned magnetic layer; and a barrier layer formed between the free layer and the pinned magnetic layer. The barrier layer is composed of a semiconductor, more specifically, a semiconductor in which MgO is used as a base material and a small amount of an impurity is doped. Furthermore, a magnetoresistive device is composed of the magnetoresistance effect element. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
