发明名称 NEAR NATURAL BREAKDOWN DEVICE
摘要 A semiconductor device includes a semiconductor region wherein the semiconductor region is a forced or non-forced Near Natural breakdown region, which is completely depleted when a predetermined voltage having a magnitude less than or equal to the breakdown voltage of a non-Natural breakdown (for example, Zener breakdown and Avalanche breakdown) is applied across the device.
申请公布号 KR20090035506(A) 申请公布日期 2009.04.09
申请号 KR20097000047 申请日期 2009.01.02
申请人 SILVER GUY;WU JUINERONG 发明人 SILVER GUY;WU JUINERONG
分类号 H01L29/68 主分类号 H01L29/68
代理机构 代理人
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