SEMICONDUCTOR DEVICE WITH REDUCED THICKNESS, ELECTRONIC PRODUCT USING THE SAME, AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device with reduced thickness and an electronic product that uses the device, and to provide a manufacturing method for the device. SOLUTION: The manufacturing method of the semiconductor device includes a step for preparing a semiconductor substrate having a first and a second active regions. A first transistor is formed in the first active region with a first gate pattern and a first impurity region. A second transistor is formed in the second active region with a second gate pattern and a second impurity region. A first conductive pattern is formed on the first transistor. At least a part of the first conductive pattern and a part of the second gate pattern are disposed, at the same distance from the surface of the semiconductor substrate. The first conductive pattern is formed, while the second gate pattern is being formed. COPYRIGHT: (C)2009,JPO&INPIT