| 摘要 |
PROBLEM TO BE SOLVED: To suppress diffusion of nitrogen and carbon contained in an inter-electrode insulating film via an application type element isolation insulating film to the side of an active region, directly below a gate insulating film, generation of fixed charge and adverse effects on the electrical characteristics of a device. SOLUTION: An application type insulating film 4b is formed on the inner side of an element isolation groove 3. A silicon oxide film 4c, containing chlorine to 5×10<SP>18</SP>[cm<SP>-3</SP>] or higher, is formed so as to cover the top of the application type insulating film 4b. The silicon oxide film 4c suppresses the infiltration of the nitrogen and the carbon contained in the inter-electrode insulating film 7 to the application-type insulating film 4b. COPYRIGHT: (C)2009,JPO&INPIT
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