| 摘要 |
<p>A thin film transistor, a manufacturing method thereof, a display device including the same are provided to prevent a short channel effect and a leakage current at the same time without increase a device investment cost. A gate insulation film(110) includes a metal oxide(110a) and an electron receiving body(110b). The electron receiving body receives an electron ionized from the metal oxide. The electron receiving body is one among I2, Mg, Al, Ga, Mn, Cr, Sc, and Yb. The metal oxide is one among Ti, Zr, Hf, and Y. A content of the electron receiving body about the metal oxide has 0.1 ~ 10mol% range. The gate insulation film is formed by using one method among a spin coating method, a slit coating method, and a spray coating method.</p> |
