| 摘要 |
PROBLEM TO BE SOLVED: To control element characteristics to desired ones. SOLUTION: An inter-gate insulating film 7 is formed by forming films in the order of a silicon nitride film 7a/ a silicon oxide film 7b/ a high dielectric insulating film 7c/ a silicon nitride film 7d/ a silicon oxide film 7e/ a silicon nitride film 7f viewed from the lower layer side. Since the silicon nitride film 7d is formed directly on the high dielectric insulating film 7c, leak currents when applying a high field effect can be suppressed in comparison with, for example, a structure wherein a single layer of the silicon oxide film 7e is applied onto the high dielectric insulating film 7c. COPYRIGHT: (C)2009,JPO&INPIT
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