发明名称 |
METHOD OF MANUFACTURING GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP |
摘要 |
Provided are a method of manufacturing a gallium nitride-based compound semiconductor light-emitting device with a low driving voltage (Vf) and high light outcoupling efficiency, a gallium nitride-based compound semiconductor light-emitting device, and a lamp. In the method of manufacturing the gallium nitride-based compound semiconductor light-emitting device, a transparent conductive oxide film 15 including a dopant is laminated on a p-type semiconductor layer 14 of a gallium nitride-based compound semiconductor device 1. The transparent conductive oxide film 15 is subjected to a laser annealing process using a laser after the lamination of the transparent conductive oxide film 15. |
申请公布号 |
US2009090922(A1) |
申请公布日期 |
2009.04.09 |
申请号 |
US20070297989 |
申请日期 |
2007.04.23 |
申请人 |
SHOWA DENKO K.K. |
发明人 |
FUKUNAGA NAOKI;OSAWA HIROSHI |
分类号 |
H01L21/02;H01L33/22;H01L33/32;H01L33/42 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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