SCHOTTKY DIODES INCLUDING POLYSILICON HAVING LOW BARRIER HEIGHTS AND METHODS OF FABRICATING THE SAME

摘要

Hybrid semiconductor devices including a PIN diode portion and a Schottky diode portion are provided. The PIN diode portion is provided on a semiconductor substrate and has an anode contact on a first surface of the semiconductor substrate. The Schottky diode portion is also provided on the semiconductor substrate and includes a polysilicon layer on the semiconductor substrate and a ohmic contact on the polysilicon layer. Related Schottky diodes are also provided herein.