METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, PRINTED CIRCUIT BOARD, AND METHOD FOR MANUFACTURING THE PRINTED CIRCUIT BOARD

摘要

Disclosed is a method for manufacturing a semiconductor device that is free from the occurrence of a deterioration in substrate quality and defects.  The method comprises the steps of forming concaves (115) on a P-type silicon substrate (101), forming an N-type diffusion layer (102) containing N-type impurities on the surface of the P-type silicon substrate (101), and exposing the area other than the concaves (115) in the P-type silicon substrate (101) to a treatment fluid of a gas phase or a liquid phase containing a chemical species that can be rendered active, whereby the surface of the assembly is treated to have properties different from the properties of the concaves (115).