发明名称 SEMICONDUCTOR MEMORY APPARATUS AND TEST METHOD THEREOF
摘要 A semiconductor memory apparatus includes a bit line pair electrically connected to a memory cell and a bit line sense amplifier for detecting and amplifying voltage levels of the bit line pair. The semiconductor memory apparatus is configured to perform a test to determine the occurrence of leakage current by deactivating the bit line sense amplifier and applying a test voltage to the bit line pair when the semiconductor memory apparatus is in test mode.
申请公布号 US2010309738(A1) 申请公布日期 2010.12.09
申请号 US20090633886 申请日期 2009.12.09
申请人 HYNIX SEMICONDUCTOR INC. 发明人 NA EUN SUNG
分类号 G11C29/08;G11C7/00 主分类号 G11C29/08
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