ARTICLES COMPRISING CRYSTALLINE LAYERS ON LOW TEMPERATURE SUBSTRATES

摘要

An article includes a polycrystalline semiconductor layer having a plurality of single crystal crystallites of semiconductor material and a substrate having a melting or softening point of <200° C. supporting the semiconductor layer. An average grain size of the plurality of single crystal crystallites is less at an interface proximate to the substrate as compared to an average grain size in the semiconductor layer remote from the interface. The semiconductor layer is fused exclusive of any bonding agent or intermediate layer to the surface of the substrate.