| 摘要 |
A semiconductor device having a porous insulation layer with a permeation prevention layer coating the pores for use in protecting against hydrogen permeation into source and drain areas is presented. The semiconductor device includes a conductive pattern, an insulation layer, and a permeation prevention layer. The conductive pattern is formed on a semiconductor substrate. The insulation layer is formed on a surface of the conductive pattern and includes a porous layer having a plurality of pores. The permeation prevention layer is formed on exposed surfaces of the pores in the porous layer.
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