发明名称 MICROWAVE PLASMA PROCESSING APPARATUS
摘要 In a microwave plasma processing apparatus, when a surface of a planar antenna 31 for radiating a microwave to form a plasma is concentrically divided into a central region 31a, an outer circumferential region 31c and a middle region 31b therebetween, a plurality of pairs of microwave radiating holes 32 elongated in different directions are concentrically arranged in the central region 31a and the outer circumferential region 31c and no microwave radiating hole is formed in the middle region 31b, and a microwave radiating surface of a microwave transmitting plate 28 is provided with a concave portion 28a.
申请公布号 US2010307685(A1) 申请公布日期 2010.12.09
申请号 US20090865519 申请日期 2009.01.30
申请人 TOKYO ELECTRON LIMITED 发明人 OTA KINYA;TIAN CAIZHONG;KOBAYASHI HIROSHI;SATO YOSHIHIRO;SHIOZAWA TOSHIHIKO;MAEKAWA KOJI
分类号 C23F1/08 主分类号 C23F1/08
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