发明名称 |
GaN single crystal substrate and method of producing same |
摘要 |
<p>A freestanding GaN single crystal substrate is made by the steps of preparing a (111) GaAs single crystal substrate, forming a mask having periodically arranged windows on the (111) GaAs substrate, making thin GaN buffer layers on the GaAs substrate in the windows of the mask, growing a GaN epitaxial layer on the buffer layers and the mask by an HVPE or an MOC, eliminating the GaAs substrate and the mask away and obtaining a freestanding GaN single crystal substrate. The GaN single crystal has a diameter larger than 20mm and a thickness more than 0.07mm, being freestanding and substantially distortion-free. <IMAGE> <IMAGE> <IMAGE> <IMAGE></p> |
申请公布号 |
EP0966047(B1) |
申请公布日期 |
2010.12.08 |
申请号 |
EP19990111739 |
申请日期 |
1999.06.17 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
MOTOKI, KENSAKU;OKAHISA, TAKUJI;MATSUMOTO, NAOKI;NISHIMOTO, TATSUYA |
分类号 |
C30B29/40;C30B25/02;C30B29/60;H01L21/20;H01L33/00;H01L33/32 |
主分类号 |
C30B29/40 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|