| 摘要 |
PURPOSE: A nonvolatile memory device and a programming method thereof are provided to uniformly form the time during which a program voltage is applied to a selected memory cell by controlling the level of the voltage applied to a bit line according to the distance between a row decoder and a string during program operation. CONSTITUTION: A memory cell array(100) comprises a plurality of memory blocks. A memory block comprises a plurality of strings. A row decoder(200) is connected to the memory cells through word lines. A page buffer(300) is connected to the memory cells through bit lines. A controller(400) successively applies a compensating voltage beginning with the bit line adjacent to the row decoder.
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