| 摘要 |
PURPOSE: A nonvolatile memory device and a programming method thereof are provided to improve data reliability by controlling a pass voltage by monitoring the channel voltage of a program inhibited cell string in real time, thereby preventing the generation of disturbance. CONSTITUTION: A memory cell array(310) comprises a plurality of cell strings. A page buffer part(320) comprises a page buffer which is connected to the bit line of the memory cell array. A Y decoder(330) supplies an input/output path to the page buffer of the page buffer part according to an input address. A voltage supply part(350) generates an operating voltage which is supplied to a word line which is connected to an X decoder under the control of a control part(360). A channel voltage sensing part(370) generates a control signal.
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