| 摘要 |
PURPOSE: A method for fabricating a mask is provided to ensure a line width coincided with a target line width by controlling or compensating line width variation of mask pattern by a cleaning process. CONSTITUTION: A method for fabricating a mask comprises the steps of: successively depositing a phase shift layer and a light blocking layer on a transparent substrate(110); forming a light blocking layer pattern(131) and a phase shift layer pattern(121) by selectively etching the phase shift layer and the light blocking layer; forming a side wall(150) for protecting the phase shift layer pattern by covering the side; cleansing the substrate; and selectively removing the light blocking layer pattern. |
