| 发明名称 |
Growth of reduced dislocation density non-polar gallium nitride |
| 摘要 |
Lateral epitaxial overgrowth (LEO) of non-polar gallium nitride (GaN) films results in significantly reduced defect density.
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| 申请公布号 |
US7847293(B2) |
申请公布日期 |
2010.12.07 |
| 申请号 |
US20070670332 |
申请日期 |
2007.02.01 |
| 申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;JAPAN SCIENCE AND TECHNOLOGY AGENCY |
发明人 |
HASKELL BENJAMIN A.;CRAVEN MICHAEL D.;FINI PAUL T.;DENBAARS STEVEN P.;SPECK JAMES S.;NAKAMURA SHUJI |
| 分类号 |
H01L29/04;C30B25/02;H01L21/20;H01L21/205;H01L21/36;H01L31/036 |
主分类号 |
H01L29/04 |
| 代理机构 |
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