摘要 |
Exposure for performing patterning in which micropatterns differing in pitch exist in close vicinity to one another is handled, and micropatterns are formed with high accuracy with sufficient manufacture process margins without using a photomask complicated in manufacturing process at high manufacture cost like an alternating phase shift mask. A light intensity distribution of irradiation light constituted of double pole illuminations is formed to correspond to L&S patterns. The double pole illumination is constituted of a pair of illumination modes, and the double pole illumination is constituted of a pair of illumination modes.
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