发明名称 |
Nonvolatile memory devices with oblique charge storage regions and methods of forming the same |
摘要 |
A nonvolatile memory device includes an active region defined by a device isolation layer in a semiconductor substrate, a word line passing over the active region and a charge storage region defined by a crossing of the active region and the word line and disposed between the active region and the word line. The charge storage region is disposed at an oblique angle with respect to the word line.
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申请公布号 |
US7847332(B2) |
申请公布日期 |
2010.12.07 |
申请号 |
US20060615098 |
申请日期 |
2006.12.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE WOON-KYUNG |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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