| 摘要 |
PROBLEM TO BE SOLVED: To provide an LDMOS transistor that can maintain breakdown voltage and lower on-state resistance, in a compatible way. SOLUTION: The semiconductor device is provided with a first conductive-type drift diffusion region 10; a second conductive-type body diffusion region 2; a first conductive-type source diffusion region 6; an insulating film 14, which is embedded in a trench formed in the upper part of the drift diffusion region 10 and is formed in a location that is separate from the body diffusion region 2; a first conductive-type drain diffusion region 7, which is formed in the upper part of the drift diffusion region 10 and is adjacent to the insulating film 14, in a direction opposite to the source diffusion region 6; and a gate electrode 5, which is formed so as to go from above the body diffusion region 2, over the drift diffusion region 10 and up to above the insulating film 14. The drift diffusion region 10 has a substrate inner region 11, and a surface region 12 which contains first conductive type impurities at a higher concentration than the substrate inner region 11. COPYRIGHT: (C)2011,JPO&INPIT |
