| 摘要 |
PURPOSE: A silicon carbide reinforced porous base and a method of forming the same are provided to simplify processes and reduce a manufacturing cost since a buffer layer or a slope layer is not required between a base and a reinforcing layer. CONSTITUTION: A silicon carbide reinforced porous base comprises a porous base(10), a silicon carbide impregnation layer(12), and a silicon carbide vapor deposition layer(20). Pores open in a network structure are distributed on the surface and in the inside of the porous base. A rough layer is formed on the surface of the porous base. The silicon carbide impregnation layer is penetrated from the surface to the inside of the base through the open pores. The silicon carbide impregnation layer is formed to be thicker than the silicon carbide vapor deposition layer. The depth of the silicon carbide impregnation layer is 0.3 mm or larger.
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