| 摘要 |
According to one embodiment, a mask determination method includes at least one of the in-plane error average value and the distribution of in-plane dispersions in a mask plane are measured with respect to at least one of the dimension and the optical characteristics of a mask pattern formed on a mask. Then, an illumination condition, under which a cost function representing an image performance formed on a substrate approaches a desired value when the exposure light is irradiated onto the mask and an on-substrate pattern is formed, is calculated based on at least one of the measured values. Further, whether the mask is acceptable or defective is determined based on the image performance when the on-substrate pattern is formed under the illumination condition.
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